IndiumV3, Chine, Analysis, bibRecord, 000D21

Study on temperature dependent resistivity of indium-doped cadmium zinc telluride

Identifieur interne : 000D21 ( Chine/Analysis ); précédent : 000D20; suivant : 000D22

Study on temperature dependent resistivity of indium-doped cadmium zinc telluride

Auteurs : RBID : Pascal:09-0106417

Descripteurs français

Pascal (Inist)
- Effet température, Conductivité électrique, Dopage, Addition indium, Niveau Fermi, Caractéristique courant tension, Niveau profond, Etat défaut, Défaut complexe, Cadmium Zinc Tellurure Mixte, Concentration impureté.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Cadmium Zinc Tellurides Mixed, Complex defect, Deep level, Defect states, Doping, Electrical conductivity, Fermi level, IV characteristic, Impurity density, Indium additions, Temperature effects.

Abstract

Indium-doped CdZnTe crystals, grown by the modified vertical Bridgman method, were characterized by temperature dependent resistivity measurements in the range from 220 to 320 K. The Fermi level, pinned near the midgap, was confirmed by fitting ln(ρ) versus 1/k₀T plots, giving energies of 0.63 eV and 0.72 eV above the valence band for the high resistivity samples, with doping levels of 5.0 x 10¹⁶ at cm^-3 and 4.8 x 10¹⁷ at cm^-3, respectively. Different dominant deep level defects or complexes for pinning the Fermi level, and hence producing high resistivity, were expected when comparing the charge transport behaviours of the materials and the dopant concentration. However, two energies of 0.24 eV and 0.33 eV, below the conduction band for the Fermi level, were calculated at positive and negative bias voltages, respectively, for a low resistivity sample doped by 9.7 x 10¹⁷ at cm^-3 In.

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Pascal:09-0106417

Le document en format XML

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<author><name>YADONG XU</name>
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<s2>Xi'an 710072</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an 710072</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Surrey</s1>
<s2>Guildford GU2 7XH</s2>
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<country>Royaume-Uni</country>
<wicri:noRegion>Guildford GU2 7XH</wicri:noRegion>
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</author>
<author><name>WANQI JIE</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, Northwestern Polytechnical University</s1>
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<country>République populaire de Chine</country>
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<author><name sortKey="Sellin, Pall" uniqKey="Sellin P">Pall Sellin</name>
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<author><name>TAO WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, Northwestern Polytechnical University</s1>
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<author><name>WEIHUA LIU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, Northwestern Polytechnical University</s1>
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<author><name>GANGQIANG ZHA</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, Northwestern Polytechnical University</s1>
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<author><name sortKey="Veeramani, Perumal" uniqKey="Veeramani P">Perumal Veeramani</name>
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<author><name sortKey="Mills, Chris" uniqKey="Mills C">Chris Mills</name>
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<publicationStmt><idno type="inist">09-0106417</idno>
<date when="2009">2009</date>
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<seriesStmt><idno type="ISSN">0022-3727</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium Zinc Tellurides Mixed</term>
<term>Complex defect</term>
<term>Deep level</term>
<term>Defect states</term>
<term>Doping</term>
<term>Electrical conductivity</term>
<term>Fermi level</term>
<term>IV characteristic</term>
<term>Impurity density</term>
<term>Indium additions</term>
<term>Temperature effects</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term>
<term>Conductivité électrique</term>
<term>Dopage</term>
<term>Addition indium</term>
<term>Niveau Fermi</term>
<term>Caractéristique courant tension</term>
<term>Niveau profond</term>
<term>Etat défaut</term>
<term>Défaut complexe</term>
<term>Cadmium Zinc Tellurure Mixte</term>
<term>Concentration impureté</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Indium-doped CdZnTe crystals, grown by the modified vertical Bridgman method, were characterized by temperature dependent resistivity measurements in the range from 220 to 320 K. The Fermi level, pinned near the midgap, was confirmed by fitting ln(ρ) versus 1/k<sub>0</sub>
T plots, giving energies of 0.63 eV and 0.72 eV above the valence band for the high resistivity samples, with doping levels of 5.0 x 10<sup>16</sup>
 at cm<sup>-3</sup>
 and 4.8 x 10<sup>17</sup>
 at cm<sup>-3</sup>
, respectively. Different dominant deep level defects or complexes for pinning the Fermi level, and hence producing high resistivity, were expected when comparing the charge transport behaviours of the materials and the dopant concentration. However, two energies of 0.24 eV and 0.33 eV, below the conduction band for the Fermi level, were calculated at positive and negative bias voltages, respectively, for a low resistivity sample doped by 9.7 x 10<sup>17</sup>
 at cm<sup>-3</sup>
 In.</div>
</front>
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<fA11 i1="04" i2="1"><s1>TAO WANG</s1>
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<fA11 i1="05" i2="1"><s1>WEIHUA LIU</s1>
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<fA11 i1="06" i2="1"><s1>GANGQIANG ZHA</s1>
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<fA11 i1="07" i2="1"><s1>VEERAMANI (Perumal)</s1>
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<fA11 i1="08" i2="1"><s1>MILLS (Chris)</s1>
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<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Indium-doped CdZnTe crystals, grown by the modified vertical Bridgman method, were characterized by temperature dependent resistivity measurements in the range from 220 to 320 K. The Fermi level, pinned near the midgap, was confirmed by fitting ln(ρ) versus 1/k<sub>0</sub>
T plots, giving energies of 0.63 eV and 0.72 eV above the valence band for the high resistivity samples, with doping levels of 5.0 x 10<sup>16</sup>
 at cm<sup>-3</sup>
 and 4.8 x 10<sup>17</sup>
 at cm<sup>-3</sup>
, respectively. Different dominant deep level defects or complexes for pinning the Fermi level, and hence producing high resistivity, were expected when comparing the charge transport behaviours of the materials and the dopant concentration. However, two energies of 0.24 eV and 0.33 eV, below the conduction band for the Fermi level, were calculated at positive and negative bias voltages, respectively, for a low resistivity sample doped by 9.7 x 10<sup>17</sup>
 at cm<sup>-3</sup>
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<fC02 i1="01" i2="3"><s0>001B70B20F</s0>
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<s5>02</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Temperature effects</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
</fC03>
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<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Fermi level</s0>
<s5>06</s5>
</fC03>
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<s5>07</s5>
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<s5>07</s5>
</fC03>
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<s5>08</s5>
</fC03>
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<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Nivel profundo</s0>
<s5>08</s5>
</fC03>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Defecto complejo</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Cadmium Zinc Tellurure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Cadmium Zinc Tellurides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Concentration impureté</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Impurity density</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Concentración impureza</s0>
<s5>13</s5>
</fC03>
<fN21><s1>075</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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Study on temperature dependent resistivity of indium-doped cadmium zinc telluride

Study on temperature dependent resistivity of indium-doped cadmium zinc telluride

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri